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 CNY35X CNY35
A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
APPROVALS l UL recognised, File No. E91231
2.54 7.0 6.0 7.62 max.
Dimensions in mm
'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form
l
8.3 max. 5.1 max. 3.9 3.1 0.48 0.25 15 Max
EN60950 approval pending
0.5 min.
DESCRIPTION The Solid State CNY35 optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package.
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Peak Forward Current Power Dissipation OUTPUT TRANSISTOR 100mA 1A 200mW
FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Power Dissipation POWER DISSIPATION
30V 70V 7V 5V 300mW
8.3 max
1.2 0.6 10.2 9.5
1.4 0.9
0.26 10.16
Total Power Dissipation 350mW (derate linearly 4.67mW/C above 25C)
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB91040-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 30 70 5 7 50 10 MIN TYP MAX UNITS 1.2 1.5 V TEST CONDITION IF = 10mA IC = 1mA IC = 100A IE = 100A IE = 100A VCE = 10V 10mAIF , 10V VCE
Output
V V V V nA %
Coupled
Collector-emitter Saturation VoltageVCE(SAT)
0.4
V
10mAIF , 0.5mAIC
Input to Output Isolation Voltage VISO
5300 7500
VRMS VPK
See note 1 See note 1
Input-output Isolation Resistance RISO 5x1010
VIO = 500V (note 1)
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
7/12/00
DB91040-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 400 Collector power dissipation P C (mW) 100 80 Forward current I F (mA) 60 40 20 0 -20 -40 -60 -80 -100 -30 0 25 50 75 100 125
Forward Current vs. Forward Voltage
300
200
100
0 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 120 Forward current I F (mA) 100 80 60 40 20 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Normalised Output Current vs. Collector-emitter Voltage Normalised output current ( I C ) IF = 1 IF = +10mA 10-1 Normalised to VCE = 10V , IF = +10mA , TA = 25C Normalised output current ( I C )
-2.0
-1.0
0
1.0
2.0
Forward voltage VF ( V ) Normalised Output Current vs. Ambient Temperature 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 0 25 50 75 Ambient temperature TA ( C ) Normalised Output Current vs. Forward Current Normalised output current ( I C ) 5 1 0.5 0.1 0.05 0.01 0.005 Normalised to VCE = 10V , IF = 10mA , TA = 25C 100 Normalised to VCE = 10V , IF = 10mA , RBE = 1M , TA = 25C IF = 20mA
IF = 10mA
IF = 5mA
10
-10mA
10
-2
0.001 0.0005 0.0001 0.1 0.2 0.5 1 2 5 10 20 50 100
10-3 0.1 0.2 0.5 1 2 5 10 20 50 Collector-emitter voltage VCE ( V )
7/12/00
Forward current IF (mA)
DB91040-AAS/A2


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